RF amplifiers with improved stability by source inductance adjustment
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorGerard Bouisse
Life of this patent
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Abstract
A radio frequency transistor amplifier package includes a package substrate with input, output, and ground terminals, and a transistor die on the package substrate. The transistor die includes a semiconductor structure having a plurality of transistors and gate, drain, and source contacts electrically coupled thereto. An inductance adjustment element is electrically coupled between the source contacts and the ground terminal, and is configured to provide a stability factor K of greater than or equal to 1 for a first operating frequency range of the transistor die. Related devices and methods are also discussed.
Claims25
A radio frequency (RF) transistor amplifier package, comprising:
- a transistor die comprising a semiconductor structure including a plurality of transistors and gate, drain, and source contacts electrically coupled thereto;
- and
- an inductance adjustment element that is electrically coupled between the source contacts and an electrical ground member, and is configured to provide a stability factor K of greater than or equal to 1 for a first operating frequency range of the transistor die, wherein the first operating frequency range comprises at least about 4 GHz to about 6 GHz.
A method of fabricating a radio frequency (RF) transistor amplifier package, the method comprising:
- providing a transistor die comprising a semiconductor structure including a plurality of transistors and gate, drain, and source contacts electrically coupled thereto;
- and
- providing an inductance adjustment element that is electrically coupled between the source contacts and an electrical ground member, and is configured to provide a stability factor K of greater than or equal to 1 for a first operating frequency range of the transistor die,
- wherein the first operating frequency range comprises at least about 4 GHz to about 6 GHz.
A radio frequency (RF) transistor amplifier package, comprising:
- a transistor die comprising a semiconductor structure including a plurality of transistors and gate, drain, and source contacts electrically coupled thereto, wherein the transistor die is configured to provide a stability factor K of less than 1 for a first operating frequency range;
- and
- an inductance adjustment element that is external to the transistor die and is electrically coupled between the source contacts and an electrical ground member,
- wherein the inductance adjustment element provides a predetermined inductance that is configured to increase the stability factor K to be greater than or equal to 1 for the first operating frequency range, and the predetermined inductance is free of inductance contributions from conductive vias that extend in the semiconductor structure of the transistor die.
Dependencies are inferred from the claim text.