Integrated device comprising stacked inductors with low or no mutual inductance

A method for fabricating an integrated device, comprising:

• providing a die substrate;
• forming a die interconnection portion coupled to the die substrate, wherein forming the die interconnection portion includes forming a plurality of die interconnects,
• wherein some die interconnects from the plurality of die interconnects form a stacked inductor that includes a first figure 8-shaped inductor and a second figure 8-shaped inductor,
• wherein the first figure 8-shaped inductor comprises:
• a first spiral comprising a first origin and a first tail;
• and
• a second spiral comprising a second origin and a second tail, wherein the second tail of the second spiral is coupled to the first tail of the first spiral;
• wherein the second figure 8-shaped inductor comprises:
• a third spiral comprising a third origin and a third tail;
• and
• a fourth spiral comprising a fourth origin and a fourth tail, wherein the fourth tail of the fourth spiral is coupled to the third tail of the third spiral,
• wherein the third spiral vertically overlaps with the first spiral,
• wherein the fourth spiral vertically overlaps with the second spiral,
• wherein the first origin of the first spiral and the third origin of the third spiral share a first port, and
• wherein the second origin of the second spiral and the fourth origin of the fourth spiral share a second port.