Semiconductor device comprising bonded a plurality of semiconductor structures along with conductive layers and bonding pads

A semiconductor device comprising:

• a first semiconductor structure including a first conductive layer and four first bonding pads connected to the first conductive layer;
• and
• a second semiconductor structure including a second conductive layer and four second bonding pads connected to the second conductive layer,
• wherein the four first bonding pads are configured to be disposed to have respective centers each overlapping four intersections that are formed by two virtual first straight lines extending in parallel in a first direction and two virtual second straight lines extending in parallel in a second direction intersecting the first direction, where each of the four first bonding pads has a first quadrant, a second quadrant, a third quadrant, and a fourth quadrant divided by a corresponding one of the two virtual first straight lines and a corresponding one of the two virtual second straight lines, and
• wherein, when the first semiconductor structure and the second semiconductor structure are normally aligned, the four second bonding pads are configured to be disposed to have respective centers that are displaced in directions from the respective centers of the four first bonding pads toward different quadrants so that a first one of the four second bonding pads overlaps at least a portion of the first quadrant of a first one of the four first bonding pads corresponding thereto, a second one of the four second bonding pads overlaps at least a portion of the second quadrant of a second one of the four first bonding pads corresponding thereto, a third one of the four second bonding pads overlaps at least a portion of the third quadrant of a third one of the four first bonding pads corresponding thereto, and a fourth one of the four second bonding pads overlaps at least a portion of the fourth quadrant of a fourth one of the four first bonding pads corresponding thereto.