Integrated circuit devices including a conductive via and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJaemyung Choi, Kang-Ill Seo, Se Jung Park
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Abstract
Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a lower metal wire, an upper metal wire on the lower metal wire, a metal via between the lower metal wire and the upper metal wire, the metal via including a lower surface and an upper surface that respectively contact the lower metal wire and the upper metal wire, and a barrier layer extending on a side surface of the metal via. An upper portion of the barrier layer may extend upwardly beyond a lower surface of the upper metal wire.
Claims20
An integrated circuit device comprising:
- a lower metal wire;
- an upper metal wire on the lower metal wire;
- a metal via between the lower metal wire and the upper metal wire, the metal via comprising a lower surface that contacts the lower metal wire and an upper surface that directly contacts the upper metal wire;
- and
- a barrier layer extending on a side surface of the metal via,
- wherein an upper portion of the barrier layer extends upwardly beyond a lower surface of the upper metal wire.
An integrated circuit device comprising:
- an insulating layer;
- a metal via in the insulating layer;
- an upper metal wire on the insulating layer and the metal via, an upper surface of the metal via contacting the upper metal wire, wherein the metal via and the upper metal wire comprise a same metal material;
- and
- a barrier layer extending on a side surface of the metal via,
- wherein an upper portion of the barrier layer is in the upper metal wire.
A method of forming an integrated circuit device, the method comprising:
- forming a metal via, a barrier layer and a first insulating layer, wherein the metal via and the barrier layer is in the first insulating layer, and the barrier layer extends between the first insulating layer and opposing side surfaces of the metal via, and wherein upper portions of the metal via and the barrier layer protrude upwardly beyond an upper surface of the first insulating layer;
- forming an adhesion layer on the upper surface of the first insulating layer, wherein the adhesion layer does not overlap an upper surface of the metal via;
- and
- forming an upper metal wire on the metal via, the barrier layer and the adhesion layer, the upper metal wire contacting the upper surface of the metal via and an upper surface of the barrier layer,
- wherein the metal via and the upper metal wire comprise a same metal material.
Dependencies are inferred from the claim text.