Infrared photodiode and sensor and electronic device

Abstract

An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.

Dependencies are inferred from the claim text.