Display device
AssigneeLG Display Co., Ltd.
InventorsYoungin Jang, Soyoung Lee, Hyungon Kim
Life of this patent
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Abstract
A display device can includes a substrate in which a plurality of sub pixels are defined; a light emitting diode disposed in a sub pixel among the plurality of sub pixels on the substrate; and a first transistor which is disposed in the sub pixel and configured to supply a driving current to the light emitting diode. Also, the first transistor can be a high electron mobility transistor (HEMT). Accordingly, the first transistor can have a high electron mobility to supply a high current to the light emitting diode and display a high luminous image.
Claims23
A display device, comprising:
- a plurality of sub pixels disposed on a substrate;
- a light emitting diode disposed in a sub pixel among the plurality of sub pixels on the substrate;
- a first transistor disposed in the sub pixel, the first transistor including a first gate electrode and configured to supply a driving current to the light emitting diode;
- and
- a second transistor disposed between the substrate and the first transistor, the second transistor being electrically connected to the first gate electrode,
- wherein the first transistor is a high electron mobility transistor (HEMT), and
- wherein the second transistor is a thin film transistor.
A display device, comprising:
- a light emitting diode disposed in a sub pixel on a substrate;
- a first transistor disposed in the sub pixel and configured to supply a driving current to the light emitting diode;
- and
- a second transistor disposed between the substrate and the first transistor,
- wherein the first transistor includes:
- a first gate electrode;
- a first channel formation layer;
- and
- a second channel formation layer disposed on the first channel formation layer,
- wherein the driving current is configured to flow along a boundary interface between the first channel formation layer and the second channel formation layer, the second transistor being electrically connected to the first gate electrode, and
- wherein the second transistor is a thin film transistor.
Dependencies are inferred from the claim text.