Silicon based quantum dot structure and quantum dot arrays incorporating blind contacts

A quantum structure, comprising:

• a substrate;
• a substantially undoped layer fabricated on said substrate including an active channel;
• a quantum dot array (QDA) fabricated on said substantially undoped layer, said QDA comprising:
• a plurality of barrier gates fabricated on said substantially undoped layer between a raised source and drain, each barrier gate operative to control a potential barrier between adjacent quantum dots;
• a plurality of blind contacts not in contact with said active channel, each blind contact disposed between adjacent barrier gates and fabricated in a metal layer above a quantum dot, said blind contacts operative to provide additional control of energy of a respective quantum dot;
• and
• a single electron transistor (SET) charge sensor fabricated in close proximity to said QDA on said undoped layer and operative to detect a presence or absence of charge in said QDA.

A quantum structure, comprising:

• a substrate;
• a substantially undoped layer fabricated on said substrate including an active channel;
• a quantum dot array (QDA) fabricated on said substantially undoped layer, said QDA comprising:
• a plurality of barrier gates fabricated on said substantially undoped layer between a source and drain, each barrier gate operative to control a potential barrier between adjacent quantum dots;
• a plurality of blind contacts not in contact with said active channel, each blind contact disposed between adjacent barrier gates and fabricated in a metal layer above a quantum dot, said blind contacts operative to provide additional control of energy of a respective quantum dot;
• a plurality of sensors/injectors fabricated on said substantially undoped layer and operative to inject and detect one or more particles in said QDA;
• and
• wherein said QDA and sensors/injectors are arranged in an ‘H’ shape configuration rotated 45 degrees from an alignment line.