Semiconductor device manufacturing method and semiconductor device manufactured using the same

A semiconductor device manufacturing method, comprising:

• forming a lower chip and an upper chip;
• and
• bonding the lower chip and the upper chip to each other;
• wherein the forming of the lower chip comprises:
• providing a lower substrate;
• sequentially forming, on the lower substrate, a lower interlayer insulating film and a pre-lower adhesive film;
• etching a first portion of the pre-lower adhesive film and a second portion of the lower interlayer insulating film to form a lower trench;
• forming, using a sputtering process, a first lower seed film in the lower trench;
• and
• forming, using the sputtering process, a second lower seed film on the first lower seed film,
• wherein the forming of the upper chip comprises:
• providing an upper substrate;
• sequentially forming, on the upper substrate, an upper interlayer insulating film and a pre-upper adhesive film;
• etching a third portion of the pre-upper adhesive film and a fourth portion of the upper interlayer insulating film to form an upper trench;
• forming, using the sputtering process, a first upper seed film in the upper trench;
• and
• forming, using the sputtering process, a second upper seed film on the first upper seed film, and
• wherein the second lower seed film and the second upper seed film comprise manganese (Mn).