Solid-state imaging element with Fin-type transistors

A solid-state imaging element, comprising:

• a plurality of pixels on a surface of a substrate, wherein
• each pixel of the plurality of pixels comprises:
• a photoelectric conversion section configured to convert light into an electric charge;
• a first transistor, wherein a first end of the first transistor is connected to the photoelectric conversion section;
• a second transistor connected between a first power supply and a first signal line;
• and
• a third transistor connected between the second transistor and the first signal line, wherein
• the second transistor includes:
• a first channel region extending in a direction substantially perpendicular to the surface of the substrate, and
• a first gate electrode on an upper surface of the first channel region and both side surfaces of the first channel region,
• the second transistor is connected to a second end of the first transistor,
• the third transistor includes:
• a second channel region extending in the direction substantially perpendicular to the surface of the substrate, and
• a second gate electrode on an upper surface of the second channel region and both side surfaces of the second channel region, and
• the first channel region of the second transistor has a first width,
• the second channel region of the third transistor has a second width,
• the first width is between the both side surfaces of the first channel region,
• the second width is between the both the side surfaces of the second channel region,
• the second width of the second channel region of the third transistor is larger than the first width of the first channel region of the second transistor,
• the second transistor is an amplifier transistor, and
• the third transistor is a selection transistor.