Single photon avalanche diode
AssigneeSK hynix Inc.
InventorSoon Yeol Park
Life of this patent
Estimating the term…
Abstract
A single photon avalanche diode may include a first diode, a second diode and a third diode. The first diode includes a first PN junction vertically spaced from a light-receiving surface by a first depth. The second diode is in partial contact with the first diode. The second diode includes a second PN junction vertically spaced from the light-receiving surface by a second depth greater than the first depth. The third diode is in partial contact with the second diode. The third diode includes a third PN junction spaced from the light-receiving surface by a third depth greater than the second depth. The first to third diodes have different breakdown voltages from one another.
Claims14
A single photon avalanche diode, comprising:
- a first diode including a first PN junction vertically spaced from a light-receiving surface by a first depth;
- a second diode in partial contact with the first diode, the second diode including a second PN junction vertically spaced from the light-receiving surface by a second depth greater than the first depth;
- and
- a third diode in partial contact with the second diode, the third diode including a third PN junction spaced from the light-receiving surface by a third depth greater than the second depth,
- wherein the first to third diodes have different breakdown voltages from one another, and
- wherein, based on levels of reverse bias voltages applied to the first to third diodes, at least one of the first to third diodes is configured to operate as a single-photon avalanche diode.
A single photon avalanche diode, comprising:
- a first diode including a first cathode region and a first anode region formed in a portion of the first cathode region to form a first PN junction, wherein the first cathode region and the first anode region are exposed on a light-receiving surface;
- a second diode including a second anode region that includes a first portion contacting the first cathode region to form a second PN junction, and a second portion connected to the first portion and extending toward the light-receiving surface;
- a third diode including a second cathode region that includes a third portion contacting the second anode region to form a third PN junction, and a fourth portion connected to the third portion and extending toward the light-receiving surface;
- a first isolation region disposed in the first cathode region at a side of the first PN junction
- a second isolation region disposed between the second PN junction and the second portion;
- and
- a third isolation region disposed between the third PN junction and the fourth portion,
- wherein the first to third diodes have different breakdown voltages from one another, and
- wherein, based on levels of reverse bias voltages applied to the first to third diodes, at least one of the first to third diodes is configured to operate as a single-photon avalanche diode.
Dependencies are inferred from the claim text.