Imaging device comprising pixel circuit and light-emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Seo, Koji Kusunoki, Takayuki Ikeda
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Abstract
A thin imaging device including a light source is provided. The imaging device includes a light-emitting device which emits infrared light. Infrared light emitted by the light-emitting device and reflected by a subject is received by a photoelectric conversion device included in a pixel circuit. Since an EL element is used as the light-emitting device, a thin imaging device with a light source can be formed. A pixel circuit utilizing an oxide semiconductor transistor having a property of low off-state current is used, whereby image capturing by a global shutter method is possible and a distortion-free image can be obtained even when the subject is moving.
Claims18
An imaging device comprising:
- a pixel circuit;
- and
- a light-emitting device,
- the pixel circuit comprising:
- a photoelectric conversion device comprising a photoelectric conversion layer;
- and
- a transistor comprising a gate electrode,
- the light-emitting device comprising:
- a first electrode;
- a second electrode;
- and
- a light-emitting layer,
- wherein the light-emitting layer is provided between the first electrode and the second electrode,
- wherein the photoelectric conversion device comprises a region which does not overlap with the first electrode, and
- wherein the gate electrode is directly above the photoelectric conversion device and under the second electrode, the gate electrode overlapping with both the photoelectric conversion device and the second electrode.
An imaging device comprising:
- a pixel circuit;
- and
- a light-emitting device,
- the light-emitting device comprising:
- a first electrode;
- a second electrode;
- and
- a light-emitting layer,
- wherein the light-emitting layer is provided between the first electrode and the second electrode,
- the pixel circuit comprising:
- a photoelectric conversion device comprising a photoelectric conversion layer;
- and
- a first transistor over an insulating surface,
- wherein one electrode of the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor,
- wherein a gate electrode of the first transistor is positioned over and overlapping with the photoelectric conversion device in a first direction perpendicular to the insulating surface,
- wherein the second electrode is positioned over and overlapping with the gate electrode of the first transistor in the first direction, and
- wherein the photoelectric conversion device comprises a region which does not overlap with the first electrode in the first direction.
An imaging device comprising:
- a pixel circuit;
- and
- a light-emitting device,
- the light-emitting device comprising:
- a first electrode;
- a second electrode;
- and
- a light-emitting layer,
- wherein the light-emitting layer is provided between the first electrode and the second electrode,
- wherein the light-emitting device emits light to an upper side,
- the pixel circuit comprising:
- a photoelectric conversion device comprising a photoelectric conversion layer;
- and
- a first transistor over an insulating surface,
- wherein one electrode of the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor,
- wherein a gate electrode of the first transistor is positioned over and overlapping with the photoelectric conversion device in a first direction perpendicular to the insulating surface,
- wherein the second electrode is positioned over and overlapping with the gate electrode of the first transistor in the first direction, and
- wherein the photoelectric conversion device comprises a region which does not overlap with the first electrode in the first direction.
Dependencies are inferred from the claim text.