Optoelecronic device with polarizing mask structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Liang Lu, Wei-Lin Chen, Chun-Hao Chou, Kuo-Cheng Lee
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Liang Lu, Wei-Lin Chen, Chun-Hao Chou, Kuo-Cheng Lee
Estimating the term…
Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.
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Dependencies are inferred from the claim text.