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US 12,740,161 B2Granted
Schottky barrier photodetector
AssigneeSamsung Electronics Co., Ltd.
InventorChanwook Baik
Life of this patent
Estimating the term…
Abstract
A photodetector, including: a semiconductor layer, a conductive layer forming a Schottky junction with the semiconductor layer, and a tunneling barrier layer between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer may be configured to block a dark current between the semiconductor layer and the conductive layer.
Claims16
A photodetector comprising:
- a semiconductor layer;
- a conductive layer comprising a first conductive layer forming a Schottky junction with the semiconductor layer, and second conductive layer on the first conductive layer;
- and
- a tunneling barrier layer between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer is configured to block a dark current between the semiconductor layer and the conductive layer, and wherein the tunneling barrier layer comprises a metal oxide semiconductor material,
- wherein a work function of the first conductive layer is set such that a barrier height of a Schottky barrier corresponding to the Schottky junction is lower than a barrier height of a Schottky barrier corresponding to a Schottky junction that would be formed by the second conductive layer and the semiconductor layer without the first conductive layer.
2 more elements
An image sensor comprising:
- a sensor array comprising a plurality of light-sensing elements, wherein each light-sensing element of the plurality of light-sensing elements comprises a photodetector;
- and
- a processor configured to decode a photoelectric signal generated at the each light-sensing element,
- wherein the photodetector comprises:
- a semiconductor layer;
- a conductive layer comprising a first conductive layer configured to form a Schottky junction with the semiconductor layer, and a second conductive layer on the first conductive layer;
- and
- a tunneling barrier layer arranged between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer is configured to block a dark current between the semiconductor layer and the conductive layer, and wherein the tunneling barrier layer comprises a metal oxide semiconductor material,
- wherein a work function of the first conductive layer is set such that a barrier height of a Schottky barrier corresponding to the Schottky junction is lower than a barrier height of a Schottky barrier corresponding to a Schottky junction that would be formed by the second conductive layer and the semiconductor layer without the first conductive layer.
6 more elements
Dependencies are inferred from the claim text.