Semiconductor structure and manufacturing method therefor

A manufacturing method for a semiconductor structure, comprising:

• providing an N-type substrate, wherein the N-type substrate comprises a first surface and a second surface opposite to the first surface, and the first surface is provided with a plurality of first grooves;
• forming an epitaxial layer on the first surface of the N-type substrate, wherein a surface of a side, away from the N-type substrate, of the epitaxial layer is provided with a plurality of second grooves, the plurality of second grooves are in one-to-one correspondence with the plurality of first grooves, and extension directions of the plurality of second grooves and the plurality of first grooves are parallel to a length direction of a channel of the semiconductor structure;
• and
• performing ion implantation on a side, away from the N-type substrate, of the epitaxial layer to form a P-type well region, and performing ion implantation on a side, away from the N-type substrate, of the P-type well region to form an N-type source region, wherein the epitaxial layer further comprises an N-type drift region and a JFET region without ion implantation, the N-type drift region is located on a side, close to the N-type substrate, of the epitaxial layer, the JFET region is located on a side, away from the N-type substrate, of the epitaxial layer, and the P-type well region is located on both sides of the JFET region.