Semiconductor device including different conductive lines
AssigneeSamsung Electronics Co., Ltd.
InventorsJihoon Chang, Jaejoon Song, Heonjun Ha, Jongmoo Lee
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Abstract
A semiconductor device includes a lower structure, an interlayer insulating layer on the lower structure, a conductive shielding line on the lower structure and penetrating through the interlayer insulating layer, a capping insulating layer on the interlayer insulating layer and the conductive shielding line, and a bit line on the lower structure and penetrating through the capping insulating layer and the interlayer insulating layer. An upper surface of the bit line is at a higher level than an upper surface of the conductive shielding line. A lower surface of the bit line is at a level equal to or lower than a level of a lower surface of the conductive shielding line.
Claims18
A semiconductor device comprising:
- a lower structure;
- an interlayer insulating layer on the lower structure;
- a conductive shielding line on the lower structure, the conductive shielding line penetrating through the interlayer insulating layer;
- a capping insulating layer on the interlayer insulating layer and the conductive shielding line;
- a bit line on the lower structure and penetrating through the capping insulating layer and the interlayer insulating layer,
- a vertical channel portion on the bit line;
- a word line facing a side surface of the vertical channel portion;
- and
- a dielectric structure between the side surface of the vertical channel portion and the word line;
- wherein an upper surface of the bit line is at a higher level than an upper surface of the conductive shielding line, and
- wherein a lower surface of the bit line is at a level equal to or lower than a level of a lower surface of the conductive shielding line.
A semiconductor device comprising:
- a lower structure;
- a first conductive line on the lower structure;
- and
- a second conductive line on the lower structure, the second conductive line being spaced apart from the first conductive line,
- wherein an upper surface of the second conductive line is at a higher level than an upper surface of the first conductive line,
- wherein a lower surface of the second conductive line is at a level the same as or lower than a level of a lower surface of the first conductive line,
- wherein a slope of a side surface of the second conductive line is different from a slope of a side surface of the first conductive line,
- wherein the side surface of the second conductive line has a negative slope, and
- wherein the side surface of the first conductive line is substantially vertical or has a positive slope.
A semiconductor device comprising:
- a substrate;
- a circuit device on the substrate;
- a wiring structure on the substrate and electrically connected to the circuit device;
- bit lines respectively extending in a first horizontal direction, and at a level higher than a level of the wiring structure;
- conductive shielding lines arranged alternately with the bit lines in a second horizontal direction perpendicular to the first horizontal direction;
- and
- word lines respectively extending in the second horizontal direction, wherein the word lines are at a higher level than the bit lines and the conductive shielding lines,
- wherein upper surfaces of the bit lines are at a higher level than upper surfaces of the conductive shielding lines, and
- wherein each of the bit lines has a negative slope.
Dependencies are inferred from the claim text.