System and method for enhancing parasitic light sensitivity of image sensor
AssigneeSemiconductor Components Industries, LLC
InventorsByounghee Lee, Andrew Eugene Perkins
Life of this patent
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Abstract
An image sensor is disclosed. The image sensor includes a plurality of image pixels. Each image pixel includes a semiconductor region having a photodiode and a light-sensitive electrical element. Each image pixel further includes a primary metalens. The primary metalens includes a dielectric layer and a plurality of nanostructures arranged within the dielectric layer. Each of the plurality of nanostructures has a first refractive index that is greater than a second refractive index of the dielectric layer. The plurality of nanostructures is patterned within the dielectric layer to direct light received by the image pixel away from the light-sensitive electrical element.
Claims20
A image sensor comprising:
- a plurality of image pixels, each image pixel comprising:
- a semiconductor region including a photodiode and a light-sensitive electrical element;
- and
- a primary metalens comprising:
- a dielectric layer;
- and
- a plurality of nanostructures arranged within the dielectric layer, wherein:
- each of the plurality of nanostructures has a first refractive index that is greater than a second refractive index of the dielectric layer;
- and
- the plurality of nanostructures is patterned within the dielectric layer to direct light received by the image pixel away from the light-sensitive electrical element.
An imaging system comprising:
- an imaging controller;
- and
- a camera module comprising:
- a lens system coupled to the imaging controller;
- an image sensor communicatively coupled to the imaging controller and comprising a plurality of image pixels, each image pixel the plurality of image pixels comprising:
- a semiconductor region including a photodiode and a light-sensitive electrical element;
- and
- a primary metalens comprising:
- a dielectric layer;
- and
- a plurality of nanostructures arranged within the dielectric layer, wherein:
- each of the plurality of nanostructures has a first refractive index that is greater than a second refractive index of the dielectric layer;
- and
- the plurality of nanostructures is patterned within the dielectric layer to direct light received by the image pixel away from the light-sensitive electrical element.
A method of operating an image sensor, the method comprising:
- receiving light from a scene at an image pixel of the image sensor;
- diffracting the light, with a primary metalens, into a semiconductor region that includes a photodiode and a light-sensitive electrical element, wherein the primary metalens includes a plurality of nanostructures with a first refractive index arranged in a pattern within a dielectric layer with a second refractive index that is less than the first refractive index;
- directing the light with the primary metalens, based on the pattern of the plurality of nanostructures within the dielectric layer, into a focal area within the semiconductor region that is separate from the light-sensitive electrical element;
- and
- producing an electrical signal with the photodiode responsive to absorption of the light in the semiconductor region.
Dependencies are inferred from the claim text.