Substrate treatment apparatus and semiconductor device manufacturing method using the same

A substrate treatment apparatus comprising:

• a housing defining a treatment area in which to perform a deposition process on a substrate;
• a gas supply configured to supply an argon (Ar) gas and a process gas;
• a remote plasma supply connected to the gas supply, and configured to receive the argon (Ar) gas and the process gas and to respectively generate an argon plasma and a process plasma by applying RF power to plasma-process the argon (Ar) gas and the process gas;
• a shower head installed in the housing and connected to receive the argon plasma and the process plasma and to supply the argon (Ar) plasma and the process plasma to the treatment area;
• a pump configured to adjust a pressure inside the housing between a first pressure and a second pressure,
• wherein the process plasma is configured to clean a membrane material deposited on an inner wall of the housing;
• and
• a controller, configured to:
• control the deposition process so that the cleaning of the membrane material deposited on the inner wall of the housing includes a first step executed at the first pressure and a subsequent second step executed at the second pressure which is less than the first pressure, and
• control the deposition process to include a chemical vapor deposition (CVD) method and an atomic layer deposition (ALD) method,
• wherein the first pressure is a pressure between 1.0 Torr and 2.0 Torr, and the second pressure is a pressure between 0.2 Torr and 0.5 Torr.

A substrate treatment apparatus comprising:

• a housing defining a treatment area for treating a substrate;
• a gas supply connected to supply a first process gas from a first source and a second process gas from a second source;
• a remote plasma supply connected to the gas supply, and configured to receive the first process gas and the second process gas and respectively generate a process plasma based on the first process gas and the second process gas by applying RF power to plasma-process the first process gas and the second process gas;
• a shower head installed in the housing and connected to receive the process plasma and to supply the process plasma to the treatment area;
• and
• a controller, configured to:
• control the supply of the first process gas and the second process gas to cause the first process gas to be supplied at a flow rate of between 1000-3000 sccm and 15000 4000 sccm, and
• control the remote plasma supply to apply the RF power to the received process gas, and
• change a pressure inside the housing from a first pressure to a second pressure lower than the first pressure, after a period of time,
• wherein the process plasma is configured to clean a membrane material when deposited on an inner wall of the housing, and
• wherein the controller is configured to:
• control the supply of the first process gas and second process gas, such that:
• the first pressure is a pressure between 1.0 Torr and 2.0 Torr, and the second pressure is a pressure between 0.2 Torr and 1 Torr.