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US 12,738,459 B2Granted
In situ surface coating of process chamber
AssigneeLam Research Corporation
InventorsJeffrey Womack, Karl Frederick Leeser, Curtis W. Bailey, Keith Joseph Martin, Rigel Martin Bruening, Nick Ray Linebarger, Jr.
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Abstract
A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.
Claims6
A reactor system comprising:
- a process chamber
- a gas inlet connected to the process chamber;
- a dispenser coupled to the gas inlet, the dispenser configured to deliver a gas flow of a first coating material from a vial into the process chamber, the first coating material configured to form a coating on an inner surface of the process chamber under operating conditions of a plasma-enhanced chemical vapor deposition chamber-wall coating cycle, the coating to reduce deposit buildup on the inner surface, the first coating material comprising trimethylaluminum (TMA), magnesium, zinc, or a fluorine-containing compound or solvent;
- and
- a substrate support configured to receive a maintenance wafer having a second coating material releasable under operating conditions of the plasma-enhanced chemical vapor deposition chamber-wall coating cycle, the second coating material comprising magnesium or zinc, wherein during the plasma-enhanced chemical vapor deposition chamber-wall coating cycle, the first coating material is introduced into the process chamber via the gas inlet, the second coating material is released from the maintenance wafer, and the first and second coating materials form the coating on the inner surface of the process chamber.
2 more elements
Dependencies are inferred from the claim text.