Substrate processing apparatus
AssigneeSamsung Electronics Co., Ltd.
InventorsJongbeom Moon, Hadong Jin, Kyung-Sun Kim, Sung-Yeol Kim, Hyosin Kim, Donghyeon Na, Chunyoon Park, Sungyong Lim
Life of this patent
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Abstract
Various example embodiments of the present disclosure provide a substrate processing apparatus including a chamber, an excitation power supply configured to generate a supply power for plasma excitation, a support inside the chamber configured to support a substrate, and a filter connected to the support. The filter is configured to change frequency characteristics of the supply power by changing an impedance of the filter based on a change in an output level of the excitation power supply.
Claims20
A substrate processing apparatus comprising:
- a chamber;
- an excitation power supply configured to generate a supply power for plasma excitation;
- a support inside the chamber configured to support a substrate;
- a filter connected to the support;
- and
- a controller,
- wherein the controller is configured to change frequency characteristics of the supply power by changing an impedance of the filter with a timing that is based on a timing of a change in an output level of the excitation power supply.
A substrate processing apparatus comprising:
- a chamber;
- an excitation power supply configured to generate a supply power for plasma excitation;
- a support inside the chamber configured to support a substrate;
- a bias power supply connected to the support to supply bias power;
- a plasma excitation plate configured to supply plasma excitation energy into the chamber;
- a filter connected to the support or the plasma excitation plate;
- and
- a controller,
- wherein the controller is configured to change frequency characteristics of the supply power by changing an impedance of the filter with a timing that is based on a timing of a change in an output level of the excitation power supply or a timing of a change in an output level of the bias power supply.
A substrate processing apparatus comprising:
- a chamber;
- an excitation power supply configured to generate a supply power for plasma excitation;
- a support inside the chamber configured to support a substrate;
- a bias power supply connected to the support and configured to supply bias power;
- and
- a filter connected between the support and the bias power supply, and
- wherein the filter includes one or more switches,
- wherein the one or more switches are configured to change frequency characteristics of the supply power by changing between on and off states based on an output level of the excitation power supply changing or an output level of the bias power supply changing.
Dependencies are inferred from the claim text.