Interrupting a memory built-in self-test
AssigneeMicron Technology, Inc.
InventorScott E. Schaefer
Life of this patent
Estimating the term…
Loading patent…
AssigneeMicron Technology, Inc.
InventorScott E. Schaefer
Estimating the term…
Implementations described herein relate to interrupting a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, that the memory built-in self-test is to be interrupted while the memory built-in self-test is being performed using a test mode. The memory device may be permitted to interrupt the memory built-in self-test while the memory built-in self-test is being performed using the test mode but may not be permitted to interrupt the memory built-in self-test while the memory built-in self-test is being performed using a repair mode. The memory device may interrupt the memory built-in self-test while the memory built-in self-test is being performed using the test mode.
A memory device, comprising:
A system, comprising:
A method, comprising:
Dependencies are inferred from the claim text.