Memory device for performing channel precharge operation and method for operating the same

A memory device comprising:

• a memory cell array including a plurality of memory cell strings coupled between a plurality of bit lines and a common source line, and a plurality of word lines coupled to the memory cell strings;
• and
• a control circuit configured to:
• repeat a program loop including a program pulse application operation and a verification operation until a program operation is successfully performed on memory cells that are coupled to a selected word line, a selected cell string, and the plurality of bit lines,
• determine a selected program loop based on an operation temperature, wherein an order of the selected program loop is determined to be relatively earlier when the operation temperature is equal to or higher than a reference temperature compared to when the operation temperature is lower than the reference temperature,
• additionally perform a channel precharge operation together with the program pulse application operation and the verification operation starting from the selected program loop, such that the channel precharge operation is not performed in program loops before the selected program loop, and
• vary a level of a precharge voltage applied to the common source line in the channel precharge operation according to the operation temperature.