Programming methods of memory, memories, and memory systems

A memory, comprising:

• a memory cell array;
• and
• a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to:
• apply a first program voltage to a first type of selected word lines and a reference voltage to unselected word lines adjacent to the first type of selected word lines during a first time period of a first program stage;
• and
• apply a second program voltage to the first type of selected word lines and a pass voltage to the unselected word lines adjacent to the first type of selected word lines during a second time period of the first program stage, wherein memory cells coupled to the unselected word lines adjacent to the first type of selected word lines are in an erased state, and the second program voltage is greater than the first program voltage.

A memory system, comprising:

• a memory controller;
• and
• a memory, wherein the memory includes:
• a memory cell array and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to:
• apply a first program voltage to a first type of selected word lines and a reference voltage to unselected word lines adjacent to the first type of selected word lines during a first time period of a first program stage;
• and
• apply a second program voltage to the first type of selected word lines and a pass voltage to the unselected word lines adjacent to the first type of selected word lines during a second time period of the first program stage, wherein memory cells coupled to the unselected word lines adjacent to the first type of selected word lines are in an erased state, and the second program voltage is greater than the first program voltage,
• wherein the memory controller is configured to control the memory to write data or read data stored in the memory.