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US 12,738,328 B2Granted
Memory device, memory system, memory controller, and operation method
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsXingwei Tang, Guangchang Ye
Life of this patent
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Abstract
Examples of the present application provide a memory device, a memory system, a memory controller, and an operation method. The memory device includes: an array of memory cells comprising multiple memory cells, wherein a preset number of memory cells form one codeword; and a peripheral circuit coupled with the array of memory cells and configured to: obtain a first result corresponding to at least one codeword at a target read voltage; obtain a first threshold according to the corresponding first result at the target read voltage; make at least one adjustment to the target read voltage, and after each adjustment, obtain a corresponding first result at the adjusted target read voltage; and determine a target valley voltage.
Claims20
A memory device, comprising:
- an array of memory cells comprising multiple memory cells, wherein a preset number of memory cells form one codeword;
- and
- peripheral circuit coupled with the array of memory cells and configured to:
- obtain a first result corresponding to at least one codeword at a target read voltage, wherein the first result comprises a value representing a number of bits in the at least one codeword which are flipped in two read results at a first read voltage and a second read voltage, and a difference between the first read voltage and the second read voltage is less than a preset voltage;
- obtain a first threshold according to the first result at the target read voltage, wherein the first threshold represents a maximum value for the first result in an effective range of predicted valley voltages;
- make at least one adjustment to the target read voltage, and after each adjustment, obtain the first result at the adjusted target read voltage;
- and
- determine a target valley voltage according to:
- a relationship between the first result at the target read voltage after one adjustment and the first threshold meeting a first preset condition;
- or
- the first result at the target read voltage after multiple adjustments meeting a second preset condition, wherein the target valley voltage is taken as a read voltage at which a read operation is performed on the at least one codeword.
8 more elements
A memory system, comprising:
- one or more memory devices, the memory device comprising:
- an array of memory cells comprising multiple memory cells, wherein a preset number of memory cells form one codeword;
- and
- peripheral circuit coupled with the array of memory cells and configured to:
- obtain a first result corresponding to at least one codeword at a target read voltage, wherein the first result comprises a value representing a number of bits in the at least one codeword which are flipped in two read results at a first read voltage and a second read voltage, and a difference between the first read voltage and the second read voltage is less than a preset voltage;
- obtain a first threshold according to the first result at the target read voltage, wherein the first threshold represents a maximum value for the first result in an effective range of predicted valley voltages;
- make at least one adjustment to the target read voltage, and after each adjustment, obtain the first result at the adjusted target read voltage;
- and
- determine a target valley voltage according to:
- a relationship between the first result at the target read voltage after one adjustment and the first threshold meeting a first preset condition;
- or
- the first result at a target read voltage after multiple adjustments meeting a second preset condition, wherein the target valley voltage is taken as a read voltage at which a read operation is performed on the at least one codeword;
- and
- a memory controller coupled with the memory device and controlling the memory device.
11 more elements
A memory controller, comprising a control component configured to:
- obtain a first result corresponding to at least one codeword at a target read voltage, wherein the at least one codeword is formed by a preset number of memory cells in an array of memory cells of at least one memory device coupled with the memory controller, wherein the first result comprises a value representing a number of bits in the at least one codeword which are flipped in two read results at a first read voltage and a second read voltage, and a difference between the first read voltage and the second read voltage is less than a preset voltage;
- obtain a first threshold according to the first result at the target read voltage, wherein the first threshold represents a maximum value for the first result in an effective range of predicted valley voltages;
- make at least one adjustment to the target read voltage, and after each adjustment, obtain the first result corresponding to the at least one codeword at the adjusted target read voltage;
- and
- determine a target valley voltage according to:
- a relationship between a the first result at the target read voltage after one adjustment and the first threshold meeting a first preset condition;
- or
- the first result at a target read voltage after multiple adjustments meeting a second preset condition, wherein the target valley voltage is taken as a read voltage at which a read operation is performed on the at least one codeword.
5 more elements
Dependencies are inferred from the claim text.