Adjusting refresh rate during self-refresh state
AssigneeMicron Technology, Inc.
InventorsJohn E. Riley, Joo-Sang Lee, Scott E. Smith
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsJohn E. Riley, Joo-Sang Lee, Scott E. Smith
Estimating the term…
Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, that a counter associated with the set of refresh operations satisfies a threshold for a second time while the memory system is in the self-refresh state. In response to the counter satisfying the threshold for the second time, a flip-flop circuit at the memory system may modify an output of the flip-flop circuit and the memory system may decrease the rate for executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.
An apparatus, comprising:
A method of operating a memory system, comprising:
A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more processors to:
Dependencies are inferred from the claim text.