Increased efficiency of current induced motion of chiral domain walls by interface engineering
AssigneeMax-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
InventorsYicheng Guan, Tianping Ma, Robin Blaesing, Stuart S.P. Parkin
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Abstract
The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device) that includes a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.
Claims31
A magnetic domain wall displacement type memory cell comprising a ferromagnetic layer, a heavy metal (HM) layer and a dusting layer (DL) consisting of a 4d metal, wherein the dusting layer is located at an interface between the ferromagnetic layer and the heavy metal layer of (i) a ferromagnetic (FM) structure or (ii) a synthetic antiferromagnetic (SAF) structure of a basic racetrack device structure,
- wherein (i) the ferromagnetic (FM) structure comprises
- one or more layer(s) of a ferromagnetic (FM) material
- the heavy metal (HM) layer and
- a coupling layer;
- and
- (ii) the synthetic antiferromagnetic (SAF) structure comprises two layers of a ferromagnetic (FM) material which are coupled antiferromagnetically via a coupling layer, with the coupling layer disposed between the two ferromagnetic (FM) material layers to form a FM layer/coupling layer/FM layer sandwich, with said sandwich deposited on the dusting layer disposed on the heavy metal (HM) layer.
A magnetic domain wall displacement type memory cell comprising a ferromagnetic layer that does not include Fe or Fe alloy, a heavy metal (HM) layer and a dusting layer (DL) consisting of a 4d metal at the ferromagnetic layer/heavy metal layer interface of a ferromagnetic (FM) structure or a synthetic antiferromagnetic (SAF) structure, and a SAF structure with a 0.2 nm thick Pd or Rh dusting layer has a decrease of ~70% in threshold current density, Jth in comparison to an otherwise identical structure with no dusting layer.
Dependencies are inferred from the claim text.