Memory device with memory pillar inside conductor

A memory device comprising:

• a first conductor extending along a first axis and a second axis;
• a first memory pillar provided in an inside of the first conductor and including a first semiconductor and a charge accumulation layer around the first semiconductor;
• a second conductor extending along the second axis and being in contact with the first memory pillar;
• a third conductor extending along the first axis and the second axis and being arranged with a distance from the first conductor along the second axis;
• a second memory pillar provided in an inside of the third conductor and including a second semiconductor and a charge accumulation layer around the second semiconductor;
• a fourth conductor extending along the second axis and being in contact with the second memory pillar;
• a fifth conductor extending along the second axis and coupled to the first memory pillar and the second memory pillar;
• a sixth conductor extending along the first axis and the second axis and being arranged with a distance with the first conductor along the first axis;
• and
• a third memory pillar provided in an inside of the sixth conductor and including a third semiconductor and a charge accumulation layer around the third semiconductor, wherein
• the first conductor includes a first stepwise structure, the first stepwise structure is connected to a first contact,
• the third conductor includes a second stepwise structure, the second stepwise structure is connected to a second contact, and
• the first contact and the second contact are sandwiched by the first conductor and the third conductor along the first axis.