Semiconductor photoresist composition and method of forming patterns using the composition
AssigneeSamsung Electronics Co., Ltd.
InventorsJi Cheol Park, Seonghyeon Ahn, Honggu Im
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Abstract
A semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an A-block and a B-block, a water contact angle of a polymer film consisting of the A-block is greater than about 50° and less than or equal to about 100°, and a water contact angle of a polymer film consisting of the B-block is greater than about 0° and less than or equal to about 50°.
Claims20
A semiconductor photoresist composition, comprising:
- an acid reactive polymer;
- a resin additive including a block copolymer;
- a photo acid generator;
- a photo-decomposable quencher;
- and
- a solvent,
- wherein:
- the block copolymer includes an A-block and a B-block,
- a water contact angle of a polymer film consisting of the A-block is greater than about 50° and less than or equal to about 100°, and
- a water contact angle of a polymer film consisting of the B-block is greater than about 0° and less than or equal to about 50°.
Dependencies are inferred from the claim text.