Mask for stitching exposure

A method of manufacturing a wire grid polarizer by exposing a mask on a substrate in a first direction and a second direction to perform a stitching process, comprising:

• performing a first exposure process on the substrate such that first shots of the mask contact each other in the first direction;
• and
• performing a second exposure process on the substrate such that second shots of the mask contact each other to be spaced apart from the first shots in the second direction and have an offset with the first shots in the first direction, wherein:
• each of the first shots and each of the second shots comprises:
• a reference energy area exposed to reference energy;
• a one-time interference area having energy higher than the reference energy due to interference of the first shots and the second shots;
• and
• a two-times interference area having energy higher than the reference energy due to interference of the first shots and the second shots;
• a one-time interference mask area of the mask corresponding to the one-time interference area has a first mask line width greater than a basic mask line width of a reference energy mask area of the mask corresponding to the reference energy area, and
• a two-times energy mask area of the mask corresponding to the two-times interference area has a second mask line width greater than a mask line width of the reference energy mask area of the mask corresponding to the reference energy area.

A method of forming a line and space pattern by exposing a mask on a substrate in a first direction and a second direction to perform a stitching process, the method comprising:

• performing a first exposure process on the substrate such that first shots of the mask contact each other in the first direction;
• and
• performing a second exposure process on the substrate such that second shots of the mask contact each other to be spaced apart from the first shots in the second direction and have an offset with the first shots in the first direction, wherein:
• the mask comprises:
• a rectangular reference energy mask area;
• a left area and a right area, respectively on left and right sides of the reference energy mask area;
• an upper left vertex area and an upper right vertex area, respectively in an upper left portion and an upper right portion of the reference energy mask area;
• a lower left vertex area and an upper lower vertex area, respectively in a lower left portion and a lower right portion of the reference energy mask area;
• an upper area above the reference energy mask area;
• an upper left area between the upper area and the upper left vertex area;
• an upper right area between the upper area and the upper right vertex area;
• a lower area below the reference energy mask area;
• a lower left area between the lower area and the lower left vertex area;
• and
• a lower right area between the lower area and the lower left vertex area,
• a line width of the reference energy mask area is a basic mask line width,
• line widths of the left area, the right area, the upper left area, the upper right area, the lower left area, and lower right area are identical to a first mask line width,
• line widths of the upper area, the lower area, the upper left vertex area, the upper right vertex area, the lower left vertex area, and the lower right vertex area are identical to a second mask line width,
• the second mask line width is greater than the first mask line width, and
• the first mask line width is greater than the basic mask line width.

A method of manufacturing a wire grid polarizer by exposing a mask on a substrate in a first direction and a second direction to perform a stitching process, the method comprising:

• performing a first exposure process on the substrate such that first shots of the mask contact each other in the first direction;
• and
• performing a second exposure process on the substrate such that second shots of the mask contact each other to be spaced apart from the first shots in the second direction and have an offset with the first shots in the first direction, wherein:
• the mask comprises:
• a rectangular reference energy mask area;
• a left area and a right area, respectively on left and right sides of the reference energy mask area;
• an upper left vertex area and an upper right vertex area, respectively in an upper left portion and an upper right portion of the reference energy mask area;
• a lower left vertex area and an upper lower vertex area, respectively in a lower left portion and a lower right portion of the reference energy mask area;
• an upper area above the reference energy mask area;
• an upper left area between the upper area and the upper left vertex area;
• an upper right area between the upper area and the upper right vertex area;
• a lower area below the reference energy mask area;
• a lower left area between the lower area and the lower left vertex area;
• and
• a lower right area between the lower area and the lower left vertex area,
• a line width of the reference energy mask area is a basic mask line width, line widths of the left area, the right area, the upper left area, the upper right area, the lower left area, and lower right area are identical to a first mask line width,
• line widths of the upper area, the lower area, the upper left vertex area, the upper right vertex area, the lower left vertex area, and the lower right vertex area are identical to a second mask line width,
• the second mask line width is greater than the first mask line width, and
• the first mask line width is greater than the basic mask line width.