US 12,735,803 B2 · Charging method for silicon material and preparation method for single crystal

Abstract

A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.

Claims20

Dependent claims

A charging method for silicon material, wherein the method is used for charging a crucible with a silicon charge, and comprises:

disposing the first material layer in the crucible;
disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming;
and
disposing a third material layer on a side of the second material layer away from the bottom of the crucible,
wherein silicon material of the first material layer has a first particle size D1, silicon material of the second material layer has a second particle size D2, and silicon material of the third material layer has a third particle size D3, satisfying D1<D2<D3.

2 more elements

A preparation method for single crystal, comprising charging silicon material into a crucible, wherein the charging silicon material comprises:

disposing a first material layer in the crucible;
disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming;
and
disposing a third material layer on a side of the second material layer away from the bottom of the crucible,
wherein silicon material of the first material layer has a first particle size D1, silicon material of the second material layer has a second particle size D2, and silicon material of the third material layer has a third particle size D3, satisfying D1<D2<D3.
wherein the preparation method for single crystal further comprises:
covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body;
and
lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/555,463Filed 4 Sep 2023

Published

US 2025/0092561 A120 Mar 2025

Granted

15 Sep 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

C30B 15/10
Single-crystal growth by pulling from a melt, e.g. Czochralski method: crucibles or containers for supporting the melt
C30B 15/14
Single-crystal growth by pulling from a melt, e.g. Czochralski method: heating of the melt or the crystallised materials
C30B 15/20
Single-crystal growth by pulling from a melt, e.g. Czochralski method: controlling or regulating
C30B 15/30
Single-crystal growth by pulling from a melt, e.g. Czochralski method: mechanisms for rotating or moving either the melt or the crystal

Charging method for silicon material and preparation method for single crystal

Life of this patent

Charging method for silicon material and preparation method for single crystal

Life of this patent

Abstract

Claims20