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US 12,734,577 B2Granted
Metal-Si based powder, method for producing same, metal-Si based sintered body, sputtering target, and metal-Si based thin film manufacturing method
AssigneeTosoh Corporation
InventorsHiroyuki Hara, Masami Mesuda
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Abstract
A metal-Si based powder contains a metal-Si based particle including a plurality of crystal phase grains. The crystal phase grains include a crystal phase containing a compound of a metal and Si. The crystal phase grains have an average grain size of, for example, 20 μm or less. The metal-Si based particle has an average particle size of, for example, 5 to 100 μm.
Claims13
A metal-Si based powder, comprising:
- a metal-Si based particle comprising a plurality of crystal phase grains,
- wherein the crystal phase grains comprise a crystal phase comprising a compound of a metal and Si,
- wherein the metal is Cr, and
- wherein the powder comprises oxygen in an amount of 0.5% by weight or less,
- wherein the powder has a relative density of an untamped density to a true density of at least 50%, and
- wherein the percent relative density of the untamped density to the true density of the powder is calculated according to the following expression:
- Percent relative density of untamped density to true density of powder=100×untamped density of powder/true density of powder.
4 more elements
Dependencies are inferred from the claim text.