Power semiconductor module and manufacturing method

A power semiconductor module comprising:

• a main substrate;
• an auxiliary substrate mounted on the main substrate, wherein the auxiliary substrate is a printed circuit board comprising a carrier layer based on an organic material and wherein the auxiliary substrate comprises a plurality of resistors;
• a joining layer located at a bottom side of the auxiliary substrate to attach the auxiliary substrate to the main substrate, the joining layer comprising a continuous organic adhesive layer, wherein the joining layer is an adhesive foil or a double-faced adhesive tape;
• a plurality of first power semiconductor chips mounted directly on the main substrate and electrically connected to the auxiliary substrate, each of the resistors being assigned to up to two of the first semiconductor chips, wherein the power semiconductor module is capable of handling a current of 10 A or more;
• wherein the plurality of first semiconductor chips comprises at least three first semiconductor chips for which the auxiliary substrate provides a common contact platform;
• wherein a top face of the auxiliary substrate comprises conductor tracks, each one of the conductor tracks is assigned to up to two of the first semiconductor chips;
• and
• wherein the conductor tracks have different lengths.

A method for manufacturing a power semiconductor module, the method comprising:

• providing a main substrate;
• mounting an auxiliary substrate onto the main substrate, the auxiliary substrate comprising a printed circuit board having a carrier layer that is based on an organic material, the auxiliary substrate being mounted using a joining layer located at a bottom side of the auxiliary substrate facing the main substrate to attach the auxiliary substrate to the main substrate, the joining layer comprising a continuous organic adhesive layer, wherein the joining layer is an adhesive foil or a double-faced adhesive tape;
• and
• mounting a plurality of first semiconductor chips over the main substrate, wherein the auxiliary substrate provides a common contact platform for at least some of the first semiconductor chips;
• wherein the power semiconductor module is capable of handling a current of 10 A or more;
• and
• wherein the auxiliary substrate comprises a pre-applied primary material layer that forms the joining layer, wherein prior to mounting the auxiliary substrate the main substrate is free of any primary material layer or joining layer configured for mounting the auxiliary substrate.