Bump structure and method of making the same

A method of manufacturing a semiconductor device, comprising:

• preparing a circuit structure over a substrate;
• forming one or more conductive layers over the circuit structure;
• forming a trench pattern by patterning the one or more conductive layers, wherein the trench pattern includes a ring or a frame shape in plan view;
• depositing an insulating material over the one or more conductive layers and within the trench pattern;
• planarizing the insulating material to remove portions of the insulating material over the one or more conductive layers while retaining an isolation structure including the insulating material within the trench pattern, wherein the isolation structure includes the ring or the frame shape in plan view;
• forming an upper conductive layer over the one or more conductive layers and the isolation structure;
• and
• forming a first metal pad by patterning the upper conductive layer so that the first metal pad is disposed over the isolation structure.

A method of manufacturing a semiconductor device, comprising:

• preparing a circuit structure over a substrate;
• forming a passivation layer over the circuit structure;
• forming one or more conductive patterns in the passivation layer;
• forming one or more conductive layers over the passivation layer;
• forming a trench pattern by patterning the one or more conductive layers, wherein the trench pattern includes a ring or a frame shape in plan view;
• depositing an insulating material over the one or more conductive layers and within the trench pattern;
• planarizing the insulating material to remove portions of the insulating material over the one or more conductive layers while retaining an isolation structure including the insulating material within the trench pattern, wherein the isolation structure includes the ring or the frame shape in plan view;
• forming an upper conductive layer over the one or more conductive layers and the isolation structure;
• and
• forming a first metal pad and a second metal pad by patterning the upper conductive layer,
• wherein the first metal pad is disposed over the isolation structure and isolated from the second metal pad.