Manufacturing method for semiconductor device

A semiconductor device manufacturing method, comprising:

• a first treatment process for
• providing a conductive plate having oxygen and carbon adsorbed to a main surface thereof, and
• reducing an amount of the oxygen and the carbon adsorbed to the main surface of the conductive plate to 20 atomic % or less;
• a first checking process for checking whether the conductive plate after the first treatment process has a temperature equal to or lower than a first reference temperature;
• a chip placement process for placing, responsive to the conductive plate having the temperature equal to or lower than the first reference temperature in the first checking process, a semiconductor chip on the main surface of the conductive plate via a sinter material containing an organic substance, such that the main surface of the conductive plate opposes a main surface of the semiconductor chip;
• a first bonding process for applying, after the chip placement process, heat and pressure to the sinter material according to a first condition that allows the organic substance to partially remain;
• a preparatory process for making, after the first bonding process, preparations for further bonding the semiconductor chip to the first main surface via the sinter material;
• and
• a second bonding process for further applying, after the preparatory process, heat and pressure to the sinter material according to a second condition that sinters the sinter material.