Semiconductor devices methods of manufacturing semiconductor devices

A semiconductor device, comprising:

• a first dielectric comprising a first side and a second side;
• a first conductive tier comprising a first conductive path integral with a first conductive via, wherein the first conductive path and the first conductive via extend between the first side and the second side of the first dielectric;
• a second dielectric comprising a first side and a second side;
• a second conductive tier comprising a second conductive path integral with a second conductive via, wherein the second conductive path and the second conductive via extend between the first side and the second side of the second dielectric;
• a first barrier between the second side of the first conductive tier and the first side of the second dielectric;
• a first electronic component coupled with the second conductive tier;
• and
• a first encapsulant coupled with the second dielectric and covering a lateral side of the first electronic component;
• wherein the second conductive tier is coupled with the first conductive tier through an opening in the first barrier;
• and
• wherein the second conductive tier comprises:
• a first arcuate vertex between a lateral side of the second conductive path and a horizontal side of the second conductive path;
• and
• a second arcuate vertex between the horizontal side of the second conductive path and a lateral side of the second conductive via.

A method to manufacture a semiconductor device, comprising:

• providing a substrate comprising a first side and a second side;
• providing a first dielectric comprising a first side and a second side, wherein the first side of the first dielectric is coupled with the second side of the substrate;
• providing a first conductive tier in the first dielectric and comprising a first conductive path integral with a first conductive via, wherein the first conductive path and the first conductive via extend between the first side of the first dielectric and the second side of the first dielectric;
• providing a first barrier covering the first conductive tier and covering the second side of the first dielectric;
• and
• providing a second dielectric comprising a first side and a second side, wherein the first side of the second dielectric is coupled with the second side of the first dielectric;
• wherein the first barrier is between the second side of the first dielectric and the first side of the second dielectric;
• and
• wherein the substrate comprises an inward terminal coupled to the first conductive tier.