US 12,733,511 B2Granted

Method for manufacturing semiconductor apparatus and semiconductor apparatus

AssigneeRohm Co., Ltd.

InventorsKoshun Saito, Kota Ise, Kosuke Yamada

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Abstract

A semiconductor device manufacturing method includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placing step and a curing step. In the first preparation step, a first leadframe including an island part is prepared. In the second preparation step, a semiconductor element including an element obverse surface, an element reverse surface, a first electrode and a second electrode is prepared. In the mounting step, the semiconductor element is mounted on the island part with a first conductive paste interposed between the element reverse surface and the island part. In the third preparation step, a second leadframe including a first part, a second part, a frame part, a first connecting part and a second connecting part is prepared. In the placing step, the second leadframe is placed with a second conductive paste interposed between the first part and the first electrode and with a third conductive paste interposed between the second part and the second electrode. In the curing step, the first conductive paste, the second conductive paste and the third conductive paste are hardened.

Claims23

Dependent claims

A method for manufacturing a semiconductor device, the method comprising:

a first preparation step of preparing a first leadframe that includes an island part;
a second preparation step of preparing a semiconductor element that includes an element obverse surface and an element reverse surface respectively facing in a first sense and a second sense of a thickness direction, the element obverse surface being provided with at least one first electrode and at least one second electrode;
a mounting step of mounting the semiconductor element on the island part with a first conductive paste interposed between the element reverse surface and the island part;
a third preparation step of preparing a second leadframe that includes a first part, a second part, a frame part, a first connecting part connecting the first part and the frame part, and a second connecting part connecting the second part and the frame part;
a placing step of placing the second leadframe with a second conductive paste interposed between the first part and the at least one first electrode and with a third conductive paste interposed between the second part and the at least one second electrode;
and
a curing step of curing the first conductive paste, the second conductive paste and the third conductive paste,
wherein the first leadframe includes a third part and a fourth part,
the first part includes a first main part and a first contacting part that is connected to the first main part and extends in the second sense of the thickness direction,
the second part includes a second main part and a second contacting part that is connected to the second main part and extends in the second sense of the thickness direction, and
in the placing step, the second leadframe is placed with a fourth conductive paste interposed between the first contacting part and the third part and with a fifth conductive paste interposed between the second contacting part and the fourth part.

8 more elements

A semiconductor device comprising:

a plurality of leads;
a semiconductor element;
and
a sealing resin covering a portion of each of the plurality of leads and the semiconductor element, wherein
the plurality of leads includes an island lead, a first lead and a second lead spaced apart from each other,
the semiconductor element includes an element obverse surface and an element reverse surface respectively facing in a first sense and a second sense of a thickness direction, the element obverse surface being provided with at least one first electrode and at least one second electrode,
the element reverse surface and the island lead are bonded to each other by a first conductive-bonding part,
the first lead includes a first main part, at least one first prong and a first extended part,
the second lead includes a second main part, at least one second prong and a second extended part,
the at least one first prong and the at least one first electrode are bonded to each other by a second conductive-bonding part,
the at least one second prong and the at least one second electrode are bonded to each other by a third conductive-bonding part,
the first extended part includes a first end face exposed from the sealing resin,
the second extended part includes a second end face exposed from the sealing resin,
the plurality of leads includes a third lead and a fourth lead,
the first lead includes a first contacting part that is connected to the first main part and extends in the second sense of the thickness direction,
the second lead includes a second contacting part that is connected to the second main part and extends in the second sense of the thickness direction,
the first contacting part and the third lead are bonded to each other by a fourth conductive-bonding part, and
the second contacting part and the fourth lead are bonded to each other by a fifth conductive-bonding part.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/249,473Filed 14 Dec 2021
Priority: JP 2020-21339323 Dec 2020
Published: US 2024/0112990 A14 Apr 2024
Granted: 8 Sep 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification31 codes

H10W 70/40
Package substrates; Interposers; Redistribution layers [RDL]: leadframes
H10W 70/415
Chip-supporting parts, e.g. die pads: leadframe inner leads serving as die pads
H10W 70/417
Chip-supporting parts, e.g. die pads: bonding materials between chips and die pads
H10W 70/442
Shapes or dispositions: of multiple leadframes in a single chip