Microelectronic assemblies having integrated thin film capacitors

A microelectronic assembly, comprising:

• a die, having a first surface and an opposing second surface, in a first dielectric layer;
• and
• an embedded metal-insulator-metal (MIM) capacitor, the MIM capacitor including:
• a first conductive pillar, having a first end and an opposing second end, in the first dielectric layer;
• a second conductive pillar, having a first end and an opposing second end, in the first dielectric layer, wherein the first and second conductive pillars form a first plate of the capacitor;
• a second dielectric layer on the second surface of the die and on the second end of the first and second conductive pillars, wherein the second dielectric layer extends at least partially along a first thickness of the first and second conductive pillars and tapers from the second end towards the first end;
• and
• a metal layer on the second dielectric layer, wherein the metal layer extends at least partially along a second thickness of the first and second conductive pillars, wherein the second thickness is less than the first thickness, and wherein the metal layer forms a second plate of the capacitor.