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US 12,733,494 B2Granted
Semiconductor element bonding portion and semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsMasaaki Tachioka, Takashi Saito
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Abstract
An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.
Claims16
A semiconductor element bonding portion comprising:
- a semiconductor element;
- a laminated substrate;
- and
- a bonding layer that bonds the semiconductor element and the laminated substrate to each other, wherein
- the bonding layer includes a sintered body of metal nanoparticles and a silane coupling agent including an SH group,
- the sintered body of the metal nanoparticles is a porous metal body in which the metal nanoparticles are sintered and bonded to one another to be continuous, and
- a periphery of the sintered body of the metal nanoparticles is coated with the silane coupling agent in the bonding layer.
4 more elements
Dependencies are inferred from the claim text.