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US 12,733,493 B2Granted
Power semiconductor device and manufacturing method
AssigneeHitachi Energy Ltd
InventorsNiko Pavlicek, Dominik Truessel, Milad Maleki, Lluis Santolaria
Life of this patent
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Abstract
In at least one embodiment, the power semiconductor device (1) comprises: at least one support (2), at least one power semiconductor chip (24) is arranged on a support top side (20), a heat sink (3) having a heat sink top side (30), the at least one support (2) is arranged on the heat sink top side (30), and a mold body (4) of an electric insulating material in direct contact with the at least one support (2) and the heat sink (3), wherein the mold body (4) fixes and presses the at least one support (2) onto the heat sink (3).
Claims20
A power semiconductor device comprising
- at least one support, at least one power semiconductor chip is arranged on a support top side,
- a heat sink having a heat sink top side, wherein the at least one support is arranged on the heat sink top side, and
- a mold body of an electric insulating material in direct contact with the at least one support and the heat sink,
- wherein the mold body fixes and presses the at least one support onto the heat sink,
- wherein the mold body is an only component in the power semiconductor device adhesively bonded to the heat sink, and the at least one support is fixed to the heat sink by means of the mold body in a force-fit manner,
- wherein the at least one support is not directly bonded to the heat sink and is held in place solely by the force-fit manner provided by the mold body pressing the support onto the heat sink, and
- wherein there is at least one recess in the mold body running from a mold body top side facing away from the heat sink to the support top side and at least one electric wiring is running through the at least one recess.
4 more elements
Dependencies are inferred from the claim text.