Passive devices in bonding layers

A device structure, comprising:

• a first die comprising a first substrate and a first interconnect structure disposed over the first substrate along a direction;
• a second die comprising a second interconnect structure disposed on the first interconnect structure along the direction and a second substrate disposed over the second interconnect structure;
• and
• an inductor structure disposed at an interface between the first interconnect structure and the second interconnect structure along the direction,
• wherein the first substrate comprises a plurality of deep trench capacitor (DTC) structures,
• wherein the DTC structure comprises a lower electrode, a dielectric layer and an upper electrode disposed over a plurality of trenches in the first substrate,
• wherein the upper electrode is electrically coupled to the inductor structure by way of a through via that extends continuously through the first interconnect structure,
• wherein the inductor structure comprises a plurality of metal layers stacked one over another along the direction,
• wherein the plurality of metal layers comprise:
• a first bond contact in the first interconnect structure,
• a first bond feature in the first interconnect structure and disposed over the first bond contact,
• a second bond feature in the second interconnect structure and interfacing the first bond feature, and
• a second bond contact in the second interconnect structure and disposed over the second bond feature,
• wherein the first bond contact, the first bond feature, the second bond feature, and the second bond contact are aligned along the direction to provide an enlarged cross-section.

A device structure, comprising:

• a first die comprising a first silicon substrate and a first interconnect structure disposed over the first silicon substrate along a direction, the first interconnect structure comprising a first bond feature;
• and
• a second die comprising a second interconnect structure disposed on the first interconnect structure along the direction and a second silicon substrate disposed over the second interconnect structure, the second interconnect structure comprising a second bond feature,
• wherein the first bond feature is bonded to the second bond feature to form an inductor structure disposed at an interface between the first interconnect structure and the second interconnect structure along the direction,
• wherein the first silicon substrate comprises a deep trench capacitor (DTC) structure,
• wherein the inductor structure is electrically coupled to the DTC structure,
• wherein the interface extends along a plane,
• wherein the inductor structure comprises a two-dimensional structure extending along the plane.