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US 12,733,435 B2Granted
Redistribution layer metallic layout structure and method with warpage reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDian-Hau Chen, Hsiang-Ku Shen, Yu-Hsiung Wang
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Abstract
The present disclosure provides a method according to some embodiments. The method includes receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features; modifying the IC layout such that the modified RDL structure meets a criterion associated with a X-Y ratio gap; generating a tape-out according to the modified IC layout; and fabricating the semiconductor structure according to the modified IC layout defined in the tape-out.
Claims20
A method, comprising:
- receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features, wherein the RDL metallic features include first conductive features longitudinally oriented along a first direction X and second conductive features longitudinally oriented along a second direction Y being orthogonal to the first direction X;
- modifying the IC layout such that the modified RDL structure meets a criterion associated with a X-Y ratio gap, wherein the X-Y ratio gap is defined as a difference between a first duty ratio of the first conductive features and a second duty ratio of the second conductive features;
- generating a tape-out according to the modified IC layout;
- and
- fabricating the semiconductor structure according to the modified IC layout defined in the tape-out.
2 more elements
A method, comprising:
- receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features formed in a passivation layer over a semiconductor substrate, wherein the RDL metallic features include first conductive features longitudinally oriented along a first direction X and second conductive features longitudinally oriented along a second direction Y being orthogonal to the first direction X;
- determining criteria according to manufacturing data, wherein the criteria include a first criterion associated with a X-Y ratio gap and a second criterion associated with an average spacing of the RDL metallic features, wherein the X-Y ratio gap is defined as a difference between a first duty ratio of the first conductive features and a second duty ratio of the second conductive features;
- modifying the IC layout such that the modified RDL structure satisfies the first and second criteria;
- and
- generating a tape-out according to the modified IC layout.
2 more elements
A method, comprising:
- receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features formed in a passivation layer over a semiconductor substrate, wherein the RDL metallic features include first conductive features longitudinally oriented along a first direction X and second conductive features longitudinally oriented along a second direction Y being orthogonal to the first direction X;
- determining criteria according to manufacturing data, wherein the criteria include a first criterion associated with a X-Y ratio gap and a second criterion associated with an average spacing of the RDL metallic features, wherein the X-Y ratio gap is defined as a difference between a first duty ratio of the first conductive features and a second duty ratio of the second conductive features;
- modifying the IC layout such that the modified RDL structure satisfies the first and second criteria, wherein the modifying of the IC layout further includes adjusting RDL metallic features of the RDL structure and adding dummy features to the RDL structure;
- making photomasks according to the modified IC layout;
- and
- fabricating the semiconductor structure using the photomasks.
3 more elements
Dependencies are inferred from the claim text.