Cleaning liquid and method for cleaning semiconductor substrate
AssigneeFUJIFILM Corporation
InventorTetsuya Kamimura
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Abstract
The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.
Claims19
A cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, the cleaning liquid comprising:
- a perhalogen acid;
- and
- a halogen acid, and
- wherein a value of a mass ratio of a content of the perhalogen acid to a content of the halogen acid is 0.00001 to 0.0025, and
- the cleaning liquid does not comprise a water-soluble polymer.
Dependencies are inferred from the claim text.