Metal ferroelectric insulator metal stack in RRAM

A memory structure comprising:

• a dielectric stack of a ferroelectric dielectric layer and a paraelectric dielectric layer,
• wherein the paraelectric dielectric layer comprises a hafnium containing oxide or a zirconium containing oxide,
• wherein at least the ferroelectric dielectric layer produces a negative capacitance to amplify an applied voltage, and
• wherein a thickness of the ferroelectric dielectric layer and a thickness of the paraelectric dielectric layer results in simultaneous breakdown of a dielectric material in each of the ferroelectric dielectric layer and the paraelectric dielectric layer for formation of conductive filaments upon being exposed to an electric field produced by the applied voltage amplified by the negative capacitance;
• a first electrode at a first end of the dielectric stack;
• and
• a second electrode at a second end of the dielectric stack,
• wherein the applied voltage is applied to the memory structure through at least one of the first electrode and the second electrode.