Display device including multi-layer multi-thickness pixel electrodes and method of manufacturing the same

A display device comprising:

• a substrate;
• a pixel circuit layer disposed on the substrate and including a thin-film transistor;
• a first pixel electrode and a second pixel electrode which are disposed on the pixel circuit layer, wherein the first pixel electrode has a first thickness, and the second pixel electrode has a second thickness less than the first thickness;
• an opposite electrode disposed on the first pixel electrode and the second pixel electrode;
• and
• a first emission layer disposed between the first pixel electrode and the opposite electrode;
• and
• a second emission layer disposed between the second pixel electrode and the opposite electrode,
• wherein each of the first pixel electrode and the second pixel electrode comprises an amorphous metal material having an amorphous state at a temperature of about 250° C.

A method of manufacturing a display device, the method comprising:

• forming a lower conductive layer on a substrate, an intermediate conductive layer on the lower conductive layer, and an upper conductive layer on the intermediate conductive layer, wherein the upper conductive layer is thicker than the lower conductive layer;
• forming a first photoresist pattern and a second photoresist pattern on the upper conductive layer, wherein the second photoresist pattern has a less thickness than the first photoresist pattern;
• forming a first pixel electrode and a preliminary pixel electrode by etching the lower conductive layer, the intermediate conductive layer and the upper conductive layer using the first photoresist pattern and the second photoresist pattern as a mask, wherein the first pixel electrode includes a first lower layer defined by a portion of the lower conductive layer, a first intermediate layer defined by a portion of the intermediate conductive layer, and a first upper layer defined by a portion of the upper conductive layer, and a preliminary pixel electrode includes a second lower layer defined by a portion of the lower conductive layer, a second intermediate layer defined by a portion of the intermediate conductive layer, and a preliminary upper layer defined by a portion of the upper conductive layer;
• removing a partial portion of the first photoresist pattern, and an entire portion of the second photoresist pattern;
• forming a second pixel electrode by partially etching the preliminary upper layer of the preliminary pixel electrode;
• and
• removing a remaining portion of the first photoresist pattern,
• wherein the first upper layer comprises an amorphous metal material having an amorphous state at a temperature of about 250° C.