Solid-state imaging device and method of manufacturing solid-state imaging device

A solid-state imaging device comprising:

• a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other;
• and
• a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters, wherein
• each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween,
• the wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters,
• a first sealing film is in contact with the first electrode of a first photoelectric converter, and a second sealing film is in contact with the first electrode of a second photoelectric converter, and
• the first sealing film and the second sealing film have junction surfaces, which are surfaces of the first sealing film and the second sealing film that face each other, joined to each other by predetermined junction processing between the first and second sealing films, and
• at least the first photoelectric converter and the second photoelectric converter have a layer order which is line-symmetric across the junction surfaces.