Light-emitting device and manufacturing method thereof

A method for manufacturing a light-emitting device, comprising:

• preparing a light-emitting element including
• a support substrate having a first surface and a second surface opposite to the first surface, and
• a first light-emitting portion and a second light-emitting portion disposed adjacent to each other on the second surface of the support substrate, the first light-emitting portion and the second light-emitting portion each including a semiconductor layered body including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in this order;
• preparing a wavelength conversion member having a first surface and a second surface opposite to the first surface and containing a phosphor that performs wavelength conversion of first light emitted from the first light-emitting portion and second light emitted from the second light-emitting portion into third light, the first surface of the wavelength conversion member being provided with a light adjustment member;
• and
• disposing the wavelength conversion member provided with the light adjustment member such that the second surface of the wavelength conversion member faces the first surface of the support substrate and the light adjustment member overlaps one of the first light-emitting portion and the second light-emitting portion in a plan view, wherein
• the light adjustment member is configured to reflect the third light and transmit the first light, and
• the disposing of the wavelength conversion member includes disposing the wavelength conversion member such that the light adjustment member overlaps the first light-emitting portion in the plan view.

A light-emitting device comprising:

• a light-emitting element including
• a support substrate having a first surface and a second surface opposite to the first surface, and
• a first light-emitting portion and a second light-emitting portion disposed adjacent to each other on the second surface of the support substrate, the first light-emitting portion and the second light-emitting portion each including a semiconductor layered body including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in this order;
• a wavelength conversion member disposed on the first surface of the support substrate and containing a phosphor configured to perform wavelength conversion of first light emitted from the first light-emitting portion and second light emitted from the second light-emitting portion into third light;
• and
• a light adjustment member disposed on a surface of the wavelength conversion member opposite to a surface on a support substrate side, the light adjustment member overlapping one of the first light-emitting portion and the second light-emitting portion in a plan view, wherein
• in the light-emitting element, an emission intensity of the first light at a light emission peak wavelength of the second light is lower than an emission intensity of the second light at the light emission peak wavelength of the second light, during light emission of the light-emitting device, and
• a difference between the light emission peak wavelength of the first light and the light emission peak wavelength of the second light during light emission is in a range from 0.1 nm to 15 nm.