Light-emitting diode and method for manufacturing thereof

A light-emitting diode (LED), comprising:

• a light-transmissive substrate having a top surface, a bottom surface opposite to said top surface, and a sidewall surface interconnecting said top surface and said bottom surface;
• a light-emitting unit including a first semiconductor layer, an active layer and a second semiconductor layer, said first semiconductor layer, said active layer and said second semiconductor layer being disposed on said top surface of said light-transmissive substrate in a stacking direction from said first semiconductor layer to said second semiconductor layer, said light-emitting unit having
• a distal surface relative to said light-transmissive substrate, and
• a lateral surface positioned between said distal surface and said top surface of said light-transmissive substrate;
• an insulating layer including a first insulating portion covering said distal surface of said light-emitting unit, and a second insulating portion covering said lateral surface of said light-emitting unit, said first insulating portion having a first opening and a second opening, said second insulating portion being not in direct contact with said sidewall surface of said light-transmissive substrate;
• a first electrode disposed on said insulating layer, said first electrode being electrically connected to said first semiconductor layer through said first opening;
• and
• a second electrode disposed on said insulating layer, said second electrode being electrically connected to said second semiconductor layer through said second opening;
• wherein at least one of said first electrode and said second electrode extends on said first insulating portion and over a juncture between said first insulating portion and said second insulating portion,
• wherein said second insulating portion extends to reach said top surface of said light-transmissive substrate, and said at least one of said first electrode and said second electrode extends over said juncture and downwardly along said second insulating portion, and
• wherein said sidewall surface of said light-transmissive substrate includes a depressed region proximate to said light-emitting unit, a non-depressed region distal from said light-emitting unit, and a shoulder region formed between said depressed region and said non-depressed region, said at least one of said first electrode and said second electrode extending over said juncture and downwardly along said second insulating portion and directly contacting said depressed region and said shoulder region.