Solid-state imaging device, method for manufacturing the same, and electronic apparatus

A manufacturing method for a solid-state imaging apparatus, the method comprising:

• forming a photoelectric conversion portion, a transfer transistor, and a voltage conversion transistor in a first semiconductor substrate,
• wherein the photoelectric conversion portion photoelectrically converts incident light, wherein the transfer transistor transfers electric charges of the photoelectric conversion portion and
• wherein the voltage conversion transistor converts the electric charges transferred by the transfer transistor into a corresponding voltage;
• bonding a front surface side of the first semiconductor substrate which is a wiring layer formation surface of the first semiconductor substrate to a back surface side of a second semiconductor substrate which is an opposite side of a wiring layer formation surface of the second semiconductor substrate;
• forming a charge voltage retention portion in the second semiconductor substrate after the bonding,
• wherein the charge voltage retention portion retains the corresponding voltage converted by the voltage conversion transistor;
• forming a through electrode that penetrates the second semiconductor substrate and transmits the corresponding voltage converted by the transfer transistor to the charge voltage retention portion;
• forming the transfer transistor and the voltage conversion transistor on a surface of the second semiconductor substrate, opposite a light incident side of the first semiconductor substrate;
• and
• not penetrating the first semiconductor substrate with the through electrode.

An electronic apparatus including a solid-state imaging apparatus, the electronic apparatus comprising:

• an optical system;
• a solid-state imaging apparatus that receives light from the optical system, the solid-state imaging apparatus comprising:
• a first semiconductor substrate;
• a second semiconductor substrate,
• wherein a front surface side of the first semiconductor substrate forms a wiring layer formation surface of the first semiconductor substrate and joins to a back surface side of the second semiconductor substrate which is an opposite side of a wiring layer formation surface of the second semiconductor substrate,
• wherein the first semiconductor substrate includes:
• a photoelectric conversion portion that photoelectrically converts incident light;
• a transfer transistor that transfers electric charges of the photoelectric conversion portion;
• and
• a voltage conversion transistor that converts the electric charges transferred by the transfer transistor into a corresponding voltage, and
• wherein the second semiconductor substrate includes a charge voltage retention portion that retains the corresponding voltage converted by the voltage conversion transistor;
• and
• a through electrode that penetrates through the second semiconductor substrate and transmits the corresponding voltage converted by the transfer transistor to the charge voltage retention portion,
• wherein the transfer transistor and the voltage conversion transistor are formed on a surface of the second semiconductor substrate, opposite a light incident side of the first semiconductor substrate and
• wherein the through electrode does not penetrate through the first semiconductor substrate;
• and
• a digital signal processor that processes signals received from the solid-state imaging apparatus.