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US 12,733,285 B2Granted
Semiconductor device, electronic device, and method for manufacturing semiconductor device
AssigneeSony Group Corporation
InventorsYoshiaki Yanagawa, Takushi Shigetoshi
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Abstract
Provided are a semiconductor device capable of constituting a through electrode having a desired shape, an electronic device, and a method for manufacturing a semiconductor device. The semiconductor device includes a first substrate including silicon, a first film formed on at least some surfaces of a hole-shaped portion formed in the first substrate, and a photosensitive second film covering at least a part of a side surface of the hole-shaped portion with the first film interposed therebetween.
Claims15
A semiconductor device, comprising:
- a first substrate that includes:
- silicon;
- a semiconductor substrate that includes a hole-shaped portion;
- and
- a multilayer wiring layer connected to the semiconductor substrate, wherein
- the hole-shaped portion is a through hole that penetrates the multilayer wiring layer from a surface of the semiconductor substrate, and
- the multilayer wiring layer includes a logic circuit;
- a first film on at least one surface of the hole-shaped portion;
- a photosensitive second film that covers at least a part of a side surface of the hole-shaped portion, wherein
- the at least one surface of the hole-shaped portion includes the side surface of the hole-shaped portion, and
- the first film is between the side surface of the hole-shaped portion and the photosensitive second film;
- and
- a second substrate includes a pixel region, wherein
- the pixel region includes pixel units, and
- the second substrate is different from the first substrate.
12 more elements
Dependencies are inferred from the claim text.