US 12,733,283 B2 · Image sensors having shared pixels with deep trench isolations therebetween overlapped by contact barrier structures

Abstract

An image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. Each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. A deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. A contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.

Claims20

Dependent claims

An image sensor, comprising:

a substrate;
first and second shared pixels, which extend adjacent to each other in a first direction across the substrate, and respectively include:
a plurality of floating diffusion regions at spaced apart locations within the substrate;
and
a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions;
a deep trench isolation structure, which extends within the substrate and at least partially partitions the first and second shared pixels from each other;
and
a contact barrier structure, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between one of the plurality of source follower gates of the first shared pixel and one of the plurality of source follower gates of the second shared pixel.

5 more elements

An image sensor, comprising:

a substrate;
a first shared pixel including first and second floating diffusion regions in the substrate, first and second source follower gates, a selection gate;
a second shared pixel including first and second floating diffusion regions in the substrate, first and second source follower gates, and a selection gate;
a deep trench isolation structure extending in the substrate, and at least partially partitioning the first shared pixel from the second shared pixel;
and
a contact barrier structure, which at least partially overlaps the deep trench isolation structure in a vertical direction, and extends between the first and second shared pixels;
wherein each of the first and second shared pixels includes a plurality of unit pixels;
and
wherein, in each of the first and second shared pixels, the first and second source follower gates are arranged at one end in a first horizontal direction and face each other in a second horizontal direction perpendicular to the first horizontal direction, and the selection gate is arranged at another end in the first horizontal direction and faces the first source follower gate in the first horizontal direction.

6 more elements

An image sensor, comprising:

a substrate;
a first shared pixel including a first sub-pixel having four first unit pixels therein that share a first floating diffusion region, a second sub-pixel having four second unit pixels therein that share a second floating diffusion region, and first, second and third source follower gates;
a second shared pixel extending adjacent to the first shared pixel in a first horizontal direction, said second shared pixel including a first sub-pixel having four first unit pixels therein that share a first floating diffusion region, a second sub-pixel having four second unit pixels therein that share a second floating diffusion region, and first, second and third source follower gates;
first and second transfer gates arranged on the substrate and respectively corresponding to the first and second unit pixels;
a deep trench isolation structure that extends within the substrate and at least partially partitions the first shared pixel from the second shared pixel;
and
a contact barrier structure having a long axis in a second horizontal direction perpendicular to the first horizontal direction, extending between the first and second shared pixels, and overlapping the deep trench isolation structure in a vertical direction;
and
wherein, in each of the first and second shared pixels, the first and second source follower gates face each other in the first horizontal direction and are arranged at both ends in the first horizontal direction, and the first and third source follower gates face each other in the second horizontal direction and are arranged at one ends in the first horizontal direction.

6 more elements

Dependencies are inferred from the claim text.

Image sensors having shared pixels with deep trench isolations therebetween overlapped by contact barrier structures

Life of this patent

Image sensors having shared pixels with deep trench isolations therebetween overlapped by contact barrier structures

Life of this patent

Abstract

Claims20