Anti-blooming control in overflow image sensor pixel
AssigneeSemiconductor Components Industries, LLC
InventorsDaniel Tekleab, Bartosz Piotr Banachowicz, Manuel H. Innocent
Life of this patent
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Abstract
Anti-blooming control in overflow image sensor pixel. At least one example is an image sensor pixel comprising: a photodetector positioned in a semiconductor substrate; a gate oxide layer positioned on the semiconductor substrate; a floating diffusion; a transfer gate positioned on the gate oxide layer; a first anti-blooming implant positioned in the semiconductor substrate, wherein the first anti-blooming implant is coupled to the photodetector and the floating diffusion; and a second anti-blooming implant positioned in the semiconductor substrate, wherein the second anti-blooming implant is coupled to the photodetector and a voltage source contact.
Claims15
An image sensor pixel comprising:
- a photodetector positioned in a semiconductor substrate that generates a charge in response to incident light;
- a gate oxide layer positioned on the semiconductor substrate;
- a floating diffusion;
- a transfer transistor having a transfer gate positioned on the gate oxide layer, wherein the transfer transistor transfers the charge generated by the photodetector to the floating diffusion;
- a first anti-blooming implant positioned in the semiconductor substrate, wherein the first anti-blooming implant is directly coupled to the photodetector and extends between the photodetector and the floating diffusion to transfer a blooming charge generated by the photodetector to the floating diffusion;
- and
- a second anti-blooming implant positioned in the semiconductor substrate, wherein the second anti-blooming implant is directly coupled to the photodetector and extends between the photodetector and a voltage source contact to transfer the blooming charge generated by the photodetector to the voltage source contact.
An imaging system comprising:
- a lens system;
- an imaging controller;
- and
- an image sensor in operational relationship with the lens system and electrically coupled to the imaging controller, wherein the image sensor including an array of image sensor pixels, wherein each of the image sensor pixels including:
- a photodetector that generates a charge in response to incident light,
- a gate oxide layer,
- a floating diffusion,
- a transfer transistor that transfers the charge generated by the photodetector to the floating diffusion,
- a first anti-blooming implant directly coupled to the photodetector and extending between the photodetector and the floating diffusion to transfer a blooming charge generated by the photodetector to the floating diffusion, and
- a second anti-blooming implant directly coupled to the photodetector and extending between the photodetector and a voltage source contact to transfer the blooming charge generated by the photodetector to the voltage source contact.
Dependencies are inferred from the claim text.